Overview
This paper introduces a unified compact model designed for various emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs.
Approach
The proposed model incorporates several key components to achieve its unified functionality:
- A unified charge-density formulation was developed. This formulation accounts for quantum confinement, trap charges, and band-tail states, integrating these factors into channel charge calculations.
- A physics-based transport model was introduced. This model is designed to seamlessly capture carrier transport characteristics, ranging from the long-channel diffusive regime to the short-channel ballistic limit.
- Scaling models were incorporated. These models describe 2D electrostatic effects accurately.
- For cryogenic operation, the model includes specific features: band-tail states and temperature-dependent mobility and threshold voltage.
Findings
The proposed unified compact model was validated against experimental data and published measurements:
- Validation was performed using experimental data from fabricated OSFETs, specifically those with multiple channel lengths.
- Further validation utilized published measurements from 2DFETs, CNFETs, and cryogenic MOSFETs.
- The validation process demonstrated excellent agreement between the model's predictions and the experimental and published data. This agreement spanned diverse device architectures, various operating conditions, and different material systems.
Why This Matters
The development of a unified compact model provides a single framework capable of describing multiple emerging transistor technologies and operating conditions, from room temperature to cryogenic environments. Its validation against experimental and published data indicates its potential applicability for modeling these varied devices.